Influence of the Composition

of (TlGaS2)1-х(TlInSe2)x Alloys on Their Physical Properties

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Mustafaeva S.N., Jafarova S.G., Kerimova E.M., Gasanov N.Z., Asadov S.M. (2016). Influence of the Composition of (TlGaS2)1-х(TlInSe2)x Alloys on Their Physical Properties. Mechanics, Materials Science & Engineering, Vol. 7, pp. 33-38. doi:10.13140/RG.2.2.29609.600

Authors: Mustafaeva S.N., Jafarova S.G., Kerimova E.M., Gasanov N.Z., Asadov S.M.

ABSTRACT. The single crystals of (TlGaS2)1-х(TlInSe2)х (х = 0–0,5) solid solutions have been grown up. The photoelectric, roentgendosimetric, dielectric and optical characteristics of the (TlGaS2)1-х(TlInSe2)х solid solutions with various compositions have been determined. The maximum and spectral range of photosensitivity were found to redshift as x increases from 0 to 0.5. Both the photo- and roentgensensitivity of the solid solutions are higher than those of pure TlGaS2. The nature of dielectric losses and the hopping mechanism of charge transport in the (TlGaS2)1-х(TlInSe2)х solid solutions were established from the experimental results on high-frequency dielectric measurements. The temperature dependences of exciton peak position for various compositions (x = 0-0.3) are investigated in 77-180 K temperature interval. It was established that with increasing x in (TlGaS2)1-х(TlInSe2)х solid solutions the width of their forbidden gap decreases.

Keywords: TlGaS2, TlInSe2, alloys physical properties, roentgensensitivity, photoresistors

DOI 10.13140/RG.2.2.29609.600


[1] Mustafaeva, S.N., Kerimova, E.M., Ismailova, P.G., and Asadov, M.M., Roentgendosimetric characteristics of detectors on the base of TlGaS2〈Yb〉 single crystals, Fizika, 2004, no. 4, p. 108.

[2] E.M. Kerimova, S.N.Mustafaeva, Yu.G.Asadov, R.N.Kerimov. Synthesis, growth and properties of TlGa1– xYbxS2 crystals, Crystallography Reports, 2005, V.50, Suppl. 1, P.S122–S123.

[3] S.N. Mustafaeva, Photoelectric and x-ray dosimetric properties of TlGaS2〈Yb〉 single crystals Physics of the Solid State, 47, 2015 (2005), doi:10.1134/1.2131137

[4] S.N. Mustafaeva, E.M. Kerimova, M.M. Asadov, R.N. Kerimov, Roentgenodetectors on the base of TlInSe  <Li+>, Fizika, Vol. 9, 62 (2003).

[5] S.N. Mustafaeva, Frequency dispersion of dielectric coefficients of layered TlGaS single crystals Physics of the Solid State, Vol. 46, 1008 (2004).

[6] S.N. Mustafaeva, Frequency dependence of real and imaginary parts of complex dielectric permittivity and conductivity of TlInSe single crystal at relaxation processes, Journal of Radioelectronics, 7, 8 (2013).

[7] Mustafaeva, S.N. Frequency effect on the electrical and dielectric properties of (TlGaS2)1- x(TlInSe2)x (x = 0.005, 0.02) single crystals, Inorg Mater (2010) 46: 108. doi:10.1134/S0020168510020032

[8] V.V. Pasynkov, V.S. Sorokin, Materials of electron techniques, Sankt-Petersburg- Moscow, 2004.368 p.

[9] N. Mott and E. Davis, Electron processes in noncrystalline materials, Clarendon Press, Oxford, 1971. 472 p.

[10] Mustafaeva, S.N., Asadov, M.M., Kyazimov, S.B. et al. T-x phase diagram of the TlGaS2-TlFeS2 system and band gap of TlGa1 − xFexS2 (0 ≤ x ≤ 0.01) single crystals, Inorg Mater (2012) 48: 984. doi:10.1134/S0020168512090117.

[11] Mustafaeva, S.N., Asadov, M.M., Kerimova, E.M. et al. Dielectric and optical properties of TlGa1−xErxS2 (x = 0, 0.001, 0.005, 0.01) single crystals, Inorg Mater (2013) 49: 1175. doi:10.1134/S0020168513120121


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