Cite the paper
Mechanics, Materials Science & Engineering, 13 (13), 2017, ISSN: 2412-5954.
Authors: Deepannita Chakraborty, S. Kaleemulla, N. Madhusudhana Rao, K. Subbaravamma, G. Venugopal Rao
ABSTRACT. The Indium-tin-oxide (ITO) and Cr doped ITO thin films were prepared using electron beam evaporation technique. The prepared thin films were subjected to structural and optical properties. From the XRD it was observed that the films were crystalline in nature with cubic structure. The crystallite size was calculated using Scherer’s relation and found that it was about 25 nm. The optical transmittance and absorbance spectra were recorded using UV-Vis-NIR spectrophotometer. From these, the optical band gap of ITO and Cr:ITO thin films were found to be 4.0 ev and 3.97 eV, respectively. The Fourier transform-Infrared spectroscopy study showed the peaks at 292, 519, 804, 957, 114, 1387 and 2985 cm-1 which are characteristic of In-O bonds.
Keywords: Cr and Sn co-doped Indium Oxide, Dilute magnetic semiconductors, wide band gap
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